tailieunhanh - High quality of gan film growth on atomically stepped lithium niobate (LiNbO3) substrates using molecular beam epitaxy (MBE)

High temperature thermal treatment has been used to obtain atomically flat surfaces and to remove surface damage caused by mechanical polishing of as-received lithium niobate (LiNbO3) substrates. Annealing at 1000 ◦C for 2 hours produces optimal surface smoothness. The micro steps are nearly parallel and periodic almost all over the sample. |

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