tailieunhanh - Effect of the ceria dopant on the structural and dielectric properties of ZnO semico nductors

All the samples exhibit a normal dielectric dispersion behavior, . it decreases with increasing frequency due to the MaxwelleWagner type of interfacial polarization. The ac conductivity data was used to evaluate the maximum barrier height, the minimum hoping distance, and the density of localized states at Fermi level. |