tailieunhanh - The mechanism of inverse magnetoresistance in high-ta annealed MnNi/Co/Ag(Cu)/Py spin valves

The magnetic transport properties – magnetoresistive (MR) effects of MnNi/Co/Ag(Cu)/ Py pinned spin valve structures (SVs) prepared by rf sputtering method and annealed at Ta = 100˚C - 500˚C for 30 minutes in high vacuum (∼ 10−5 torr) are investigated. The received results show a change in the observed MR behaviors from a normal GMR effect to an inverse magnetoresistive (IMR) effect after annealing at high temperatures, 300˚C and 400˚C, for these SVs. The origin and mechanism of the IMR behavior are analyzed and discussed. These results will suggest an ability to manufacture SV devices used the IMR effect for enhancing the application capacities for SV-sensor systems. | The mechanism of inverse magnetoresistance in high-ta annealed MnNi Co Ag Cu Py spin valves