tailieunhanh - The effect of fractional derivative on photo-thermoelastic interaction in an infinite semiconducting medium with a cylindrical hole

In the present paper, the theory of generalized photo-thermoelasticity under fractional order derivative was used to study the coupled of thermal, plasma, and elastic waves on unbounded semiconductor medium with a cylindrical hole during the photo-thermoelastic process. | The effect of fractional derivative on photo-thermoelastic interaction in an infinite semiconducting medium with a cylindrical hole Engineering Solid Mechanics 6 2018 275-284 Contents lists available at GrowingScience Engineering Solid Mechanics homepage esm The effect of fractional derivative on photo-thermoelastic interaction in an infinite semiconducting medium with a cylindrical hole Ibrahim A. Abbasa b Faris S. Alzahranib and F. Bertoc a Department of mathematics Faculty of Science Sohag University Sohag Egypt b Nonlinear Analysis and Applied Mathematics Research Group NAAM Department of Mathematics King Abdulaziz University Jeddah Saudi Arabia c NTNU Department of Engineering Design and Materials Richard Birkelands vei 2b 7491 Trondheim Norway A R T I C L EI N F O ABSTRACT Article history In the present paper the theory of generalized photo-thermoelasticity under fractional order Received 22 December 2017 derivative was used to study the coupled of thermal plasma and elastic waves on unbounded Accepted 23 April 2018 semiconductor medium with a cylindrical hole during the photo-thermoelastic process. The Available online bounding surface of the cavity was traction free and loaded thermally by exponentially 23 April 2018 Keywords decaying pulse boundary heat flux. The medium was considered to be a semiconductor Fractional calculus medium homogeneous and isotropic. In addition the elastic and thermal properties were Relaxation time considered without neglecting the coupling between the waves due to thermal plasma and Laplace transform elastic conditions. Laplace transform techniques were used to obtain the exact solution of the A semiconducting material problem in the transformed domain by the eigenvalue approach and the inversion of Laplace Cylindrical cavity transforms were carried out numerically. The results were displayed graphically to estimate the effect of the thermal relaxation time and the fractional order parameters on the .

• Cơ khí - Chế tạo máy
• The effect of fractional derivative
• Photo thermoelastic interaction
• Infinite semiconducting medium
• Generalized photo thermoelasticity
• Photo thermoelastic process