tailieunhanh - Demonstration on ferroelectric-gate thin film transistor NAND-type array with disturbance free operation

A novel concept of NAND memory array has been proposed by using only ferroelectricgate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between and (BLT/PZT) gate insulator. | Demonstration on ferroelectric-gate thin film transistor NAND-type array with disturbance free operation

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