tailieunhanh - Photoluminescence and point defect related emission of ZnO:Mn2 micro nanorod fabricated by co-precipitation method
The photoluminescence emission evolution of ZnO through doping and annealing processes hinted the relation of point defect transformations. We found that zinc interstitial, zinc vacancy and its related defects were responsible mainly for photoluminescence emission in annealing and/or Mn2+ doped samples. | VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 2 (2018) 37-44 Photoluminescence and Point Defect Related Emission of ZnO:Mn2+ micro/nanorod Fabricated by Co-precipitation Method Nguyen Xuan Sang*, Le Phuoc Sang, Nguyen Minh Quan, Nguyen Huu Tho Saigon University, 273 An Duong Vuong, Ward 3, District 5, Ho Chi Minh City, Vietnam Received 29 May 2018 Accepted 15 July 2018 Abstract: Herein we study point defects and correlation to photoluminescence in ZnO nanorod. ZnO mirco/nanorod structure was successfully fabricated by co-precipitation method with highly homogeneous characteristics. When ion Mn+2 introduced into ZnO structure, the d-spacing distance of ZnO was increased from nm to nm due to the larger ionic radius of Mn 2+ in comparison to Zn2+. The photoluminescence emission evolution of ZnO through doping and annealing processes hinted the relation of point defect transformations. We found that zinc interstitial, zinc vacancy and its related defects were responsible mainly for photoluminescence emission in annealing and/or Mn2+ doped samples. Keywords: ZnO nanorod, photoluminescence, co-precipitation, Mn2+ dopant, zinc vacancy 1. Introduction Nowadays, one-dimensional (1D) micro/nanostructure ZnO fabrication and characterization have been attracted a lot of attention because of its highly potential application in light emitting device and the interesting unipolar property of the morphology which is suitable for gate-length miniaturization in semiconductor devices [1, 2]. Moreover, the morphological asymmetry may induce an advance in onedirection electron control which would bring high efficiencies in terms of electrical power, light emitting, and photocatalytic activity[2-5]. Recently, 1D ZnO crystals doped and undoped with transitional metal ions, such as Mn2+, Cr3+, 2+ Cu , Fe2+ have been studied and showed interesting properties because the doped materials exhibited both semiconductor and magnetic behaviors [6-9]. For optical .
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