tailieunhanh - Conductive-perovskite LaNiO3 thin films prepared by using solution process for electrode application

As a result, thecapacitor using ()O3ferroelectric layer annealed at 600oC and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm2 and a saturated polarization of 35µC/cm2 . Moreover, the leakage current density was lower than 2 × 10-5 A/cm2 . | VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 2 (2018) 20-26 Conductive-perovskite LaNiO3 Thin Films Prepared by Using Solution Process for Electrode Application Nguyen Quang Hoa1, Bui Nguyen Quoc Trinh2,* 1 Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam Faculty of Engineering Physics and Nanotechnology, VNU University of Engineering and Technology, 144 Xuan Thuy, Cau Giay, Hanoi, Vietnam 2 Received 08 April 2018 Revised 21 May 2018; Accepted 21 May 2018 Abstract: Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found that the LNO thin films annealed in range of 550-700oC for 30 minutes exhibited a well-formed crystallization and a dense microstructure. According to the SEM cross-sectional observation, the thickness of LNO thin films was estimated about 80 nm. Also, from the four-probe measurement method, the electrical resistivity of LNO thin film annealed at 600oC had a minimum value of × 10-2 Ωcm, which waspossibly comparable to conventional conductive oxides. As a result, thecapacitor using Pb ()O3ferroelectric layer annealed at 600oC and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm2 and a saturated polarization of 35µC/cm2. Moreover, the leakage current density was lower than 2 × 10-5 .