tailieunhanh - Integration of CNTS thin film for sensing and actuating micro structures

This paper reports the top-down fabrication of CNTs thin film on MEMS structure to develop sensing and actuating micro structures. In particular, this paper review the integration of CNTs film in application of silicon micromirror based on angular vertical comb actuator, development of microstructures with piezoresistive effect and Seebeck effect. | Vietnam Journal of Mechanics, VAST, Vol. 34, No. 4 (2012), pp. 299 – 309 INTEGRATION OF CNTS THIN FILM FOR SENSING AND ACTUATING MICRO STRUCTURES Dau Thanh Van1 , Bui Thanh Tung2 , Dao Viet Dzung3 , Susumu Sugiyama4 1 Health and Crop Science Laboratory, Sumitomo Chemical Ltd., Hyogo, Japan 2 National Institute of Advanced Industrial Science and Technology (AIST), Japan 3 Griffith School of Engineering, Griffith University, Gold Coast Campus, Australia 4 Graduated School of Science and Engineering, Ritsumeikan University, Shiga, Japan Abstract. This paper reports the top-down fabrication of CNTs thin film on MEMS structure to develop sensing and actuating micro structures. In particular, this paper review the integration of CNTs film in application of silicon micromirror based on angular vertical comb actuator, development of microstructures with piezoresistive effect and Seebeck effect. Keyword: CNTs thin film, sensor, actuator, Seebeck effect, piezoresistive effect, micromirror. 1. INTRODUCTION Research on carbon nanotubes (CNTs) for sensing and manipulation application is a very promising direction for nanoscale devices due to CNTs excellent electrical and mechanical properties. CNTs possess a tensile strength larger than any other known materials [1]. CNTs have been used in various applications for tunable electrometrical oscillators [2], DNA detection [3], non-volatile memory [4], sensors [5], actuator [6], field-emitting flat panel displays [7] and also nanotube radio [8]. The integration of CNTs in microelectromechanical systems (MEMS) is usually relies either on bottomup (in-situ growth) or top-down (postgrowth) methods. The bottom-up technique utilizes catalytic particles directly patterned onto a substrate to control the position of CNTs, while the top-down method focuses on manipulation of the growth CNTs into the desired positions. Although bottom-up methods have particularly advantages in the area of field-effect transistor, the poor compatibility .