tailieunhanh - Chế tạo màng dẫn điện trong suốt ZnO:In bằng phương pháp phún xạ magnetron DC

Màng ZnO:In được chế tạo trên đế thuỷ tinh bằng phương phún xạ magnetron dc từ bia gốm ZnO:In. Các bia gốm ZnO:In có nồng độ In2O3 thay đổi từ 1 đến 4% khối lượng. Màng có điện trở suất x 10-3 Ωcm với độ dày màng khoảng 1µm ứng với bia gốm có 2%In2O3, nhiệt độ đế khoảng 240oC. Tất cả các màng ZnO:In đều có độ truyền qua trên 85% trong vùng ánh sáng khả kiến. | Science & Technology Development, Vol 14, 2011 TRANSPARENT CONDUCTING ZnO:In THIN FILMS PREPARED BY MAGNETRON DC SPUTTERING METHOD Ho Van Binh, Le Vu Tuan Hung, Le Queo, Pham Thanh Tuan, Duong Ai Phuong, Le Van Hieu University of Science, VNU-HCM (Manuscript Received on November 29th, 2010, Manuscript Revised September 10th , 2011) ABSTRACT: ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of x 10-3 Ωcm, at a layer thickness of about 1µm, corresponding with ZnO:In target (2%wt In2 O3), at the substrate temperature of about 2400 C. All ZnO:In thin films have the transparence above 85% in the visible spectra. Keywords: Magnetron DC sputtering, ZnO:In, Transparent Conducting Oxide (TCO). 1. INTRODUCTION doped zinc oxide (IZO) thin films were prepared by magnetron DC sputtering method Transparent and conducting oxide (TCO) thin films with unique characteristics of low resistivity and high transparency over the visible wavelength region have numerous applications in optoelectronic devices including thin film solar cell, organic light emitting on glass substrates. the structural, optical, and electronic properties of the IZO films have been investigated with some different parameters depositing films such as the concentrations of indium and substrate temperature. devices (OLED), and other flat panel displays. One of the common TCO films is ITO, it is used as anodes of several devices. However, indium is a rare metal in nature and the cost of experiment is increasing drastically. Recently, Al, Ga or In doped zinc oxide films have been considered as possible alternatives to ITO films because ZnO thin films are less expensive than the ITO films. ZnO thin films were deposited by several techniques such as radio frequency (RF) sputtering process, pulsed laser .