tailieunhanh - Roles of gate oxide thickness reduction in scaling bulk and thin body tunnel field effect transistors

The reduction of gate-oxide thickness plays an important role in maintaining low subthreshold swing whereas it shows a less role in suppressing off-state leakage in short-channel TFETs with bulk and thinbody structures. When scaling the gate-oxide thickness, the short-channel effect is suppressed more effectively in thin-body TFETs than in bulk devices. Clearly understanding the roles of scaling gate-oxide thickness is necessary in designing advanced scaled TFET devices. | Vietnam Journal of Science and Technology 55 (3) (2017) 316-323 DOI: ROLES OF GATE-OXIDE THICKNESS REDUCTION IN SCALING BULK AND THIN-BODY TUNNEL FIELD-EFFECT TRANSISTORS Nguyen Dang Chien1, *, Dao Thi Kim Anh2, Chun-Hsing Shih3 1 2 3 Faculty of Physics, University of Dalat, Lam Dong 671460, Vietnam Department of Postgraduate Studies, University of Dalat, Lam Dong 671460, Vietnam Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan * Email: chiennd@ Received: 27 May 2016; Accepted for publication: 22 February 2017 ABSTRACT Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel performance of TFETs has to be characterized by both the off-current and the subthreshold swing because their physical origins are completely different. The reduction of gate-oxide thickness plays an important role in maintaining low subthreshold swing whereas it shows a less role in suppressing off-state leakage in short-channel TFETs with bulk and thinbody structures. When scaling the gate-oxide thickness, the short-channel effect is suppressed more effectively in thin-body TFETs than in bulk devices. Clearly understanding the roles of scaling gate-oxide thickness is necessary in designing advanced scaled TFET devices. Keywords: gate-oxide scaling, SOI structure, short-channel effect, low-bandgap device, tunnel field-effect transistor (TFET). 1. INTRODUCTION In order to reduce the power consumption of electronic devices, one needs scaling down supply voltage because the dynamic power consumption of integrated circuits is a quadratic function of applied voltage [1]. For that purpose, tunnel field-effect transistor (TFET) has been recognized as a feasible choice since its .

• Kĩ thuật Viễn thông
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• Roles of gate oxide thickness reduction
• Scaling bulk and thin body tunnel field effect transistors
• The short channel effect
• Short channel TFETs
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