tailieunhanh - Scaps simulation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell

Operation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell was calculated using the SCAPS software. Main input data were energy band gap Eg, absorption coefficient α, thickness d, mobility μ and carrier concentration n of the ZnO, In2S3 and Cu2Sn3S7 films obtained from experiments. | Journal of Science and Technology 54 (1A) (2016) 183-189 SCAPS SIMULATION OF ZnO/In2S3/Cu2Sn3S7/Mo SOLAR CELL Phung Dinh Hoat1, *, Do Phuc Hai2 1 Faculty of Engineering Physics and Chemistry, Le Quy Don Technical University, 236 Hoang Quoc Viet Street, Cau Giay District, Hanoi 2 School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Street, Hai Ba Trung District, Hanoi * Email: hoatma@ Received: 30 August 2015. Accepted for publication: 26 October 2015 ABSTRACT Operation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell was calculated using the SCAPS software. Main input data were energy band gap Eg, absorption coefficient α, thickness d, mobility μ and carrier concentration n of the ZnO, In2S3 and Cu2Sn3S7 films obtained from experiments. In all calculation processes, parameters of the ZnO (Eg = eV, d = μm, μn = 100 cm2/(Vs)) and In2S3 (Eg = eV, d = μm, μn = 50 cm2/(Vs)) films were kept constant. Effects of thickness d and carrier concentration np of the Cu2Sn3S7 (αmax = ×104 cm-1, Eg = eV) film on Voc, Jsc, Vm, Jm, FF and η of the cell were investigated in the ranges of d = – μm and np = 1017 – 1020 cm-3. Under the standard AM illumination at 300 K, the ZnO/In2S3/Cu2Sn3S7/Mo solar cell having Rs = 10 and Rsh = 1×106 using Cu2Sn3S7 film having d = 2 µm, αmax = ×104 cm-1, Eg = eV, μp = 15 cm2/(Vs) and np = 1020 cm-3 has the highest conversion efficiency ηmax = % with Voc = V, Jsc = mA/cm2, Vm = V, Jm = mA/cm2 and FF = %. Keywords: Cu2Sn3S7, SCAPS, Solar cell. 1. INTRODUCTION Recently, compounds consisting of cheap, earth abundant and environmental green Cu, Sn and S elements of ternary system Cu-Sn-S, such as Cu2SnS3, Cu2Sn3S7, Cu4SnS4, Cu5Sn2S7, Cu4Sn7S16 and Cu4SnS6 etc [1 - 5], have attracted much attention because of their good optical and electrical properties for various potential applications not only in thin film solar cells but also in