tailieunhanh - Epitaxial-like Growth of Solution-processed PbZr0.4Ti0.6O3 Thin Film on Single-crystal Nb-doped SrTiO3 Substrate

In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 µC/cm2 and leakage current of 8×10-8 A were obtained at applied voltage of 5 V. | . It leads to the upward shift of the Fermi level into the conduction band [11]. The extrinsic doping concentration level is usually proportional to the number of carriers presented in the structure, which dictates the conductive and electronic transport mechanism of the material [12]. With a slightly doped Nb, STO can transfer from dielectric to conducting, and play a role in both a bottom electrode and oriented substrate. In addition, the crystal structure of STO is quite alike with PZT, ensuring the growth of PZT thin film [13]. It has been reported that PZT(111) would be formed on Nb:STO(111) while it is PZT(001) for Nb:STO(100) because of a small mismatch unit cells [14-16]. Alternatively, sol-gel processing is well-suited for depositing high-quality PZT films with good chemical homogeneity, simple and short-time fabrication, easy to control, and less affected by other factors [17-20]. Thus, fabrication of PZT thin film on Nb:STO(111) substrate by using solution process and investigating on their characteristics are studied.