Đang chuẩn bị liên kết để tải về tài liệu:
Báo cáo hóa học: " Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films | Jacques et al. Nanoscale Research Letters 2011 6 170 http www.nanoscalereslett.eom content 6 1 170 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNy and SiO2 films Emmanuel Jacques1 Laurent Pichon1 Olivier Debieu2 Fabrice Gourbilleau2 Abstract We examined and compared the electrical properties of silica SiO2 and silicon oxynitride SiOxNy layers embedding silicon nanoclusters Sinc integrated in metal-insulator-semiconductor MIS devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al SiOxNy-Sinc p-Si and Al SiO2-Sinc p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio 104 for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating SiO2-based device . For rectifier devices the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content. Introduction Silicon heterojunctions have been extensively studied for the understanding of the physics of the device as well as their applications to majority of the carrier rectifier 1 photodetectors 2 solar cells 3 and indirect gap injection lasers 4 . Because of its indirect band gap silicon is a highly inefficient material for a light emitter. However to overcome this problem different approaches were developed in this last decade for the fabrication of Si-based light emitting sources made of silicon nanoclusters Sinc embedded in silica or silicon oxynitride SiO2-Sinc or SiOxNy-Sinc matrix. Due to quantum confinement effects Sinc are characterized by an energy band gap which is enlarged with respect to bulk .