Đang chuẩn bị liên kết để tải về tài liệu:
Báo cáo hóa học: "Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy"
Đang chuẩn bị nút TẢI XUỐNG, xin hãy chờ
Tải xuống
Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy | Jia et al. Nanoscale Research Letters 2011 6 316 http www.nanoscalereslett.eom content 6 1 316 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Valence band offset of InN BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy Caihong Jia1 2 Yonghai Chen 1 Yan Guo1 Xianglin Liu1 Shaoyan Yang1 Weifeng Zhang2 and Zhanguo Wang1 Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset VBO and conduction band offset CBO are determined to be 2.25 0.09 and 0.15 0.09 eV respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor ferrroelectric heterojunction multifunctional devices. Introduction The semiconductor-ferroelectric heterostructures have attracted much attention due to their large potential for new multifunctional electronic and optoelectronic device applications 1-5 . Hysteresis properties of the ferroelectric polarization allow for bistable interface polarization configuration The polarization coupling between the fixed permanent semiconductor dipole and the switchable ferroelectric dipole can be exploited to modify the electronic and the optical properties of a semiconductor heterostructure. Recently GaN-based high electron mobility transistor devices have been integrated on ferroelectric LiNbO3 providing the compact optoelectro-nic electronic chips with increased cost savings and added functionality 6 . The semiconductor-ZnO ferro-electric-BaTiO3 BTO heterostructure metal-insulator-semiconductor field-effect transistors have been demonstrated in which the polarization of the BTO can be used to control the free carrier concentration in the ZnO channel 7 . In order to fully exploit the advantages of semiconductor-ferroelectric .